Activities

Stages
Activities Calendar
Stage I

Stage I  Elaboration of the methodology of research. Preparation of bulk chalcogenide materials based on As-S-Se compositions. Duration of stage I: 3 months.

A I.1 Elaboration of the methodology of research regarding the optical properties of the materials and the production of optical elements (NIMP, NILPRP, NIG). Results: research report.

A I.2 Preparation of bulk chalcogenide materials based on As-S-Se compositions (NIG, NIMP). Results: samples of bulk chalcogenide materials.

A I.3 Elaboration of the experimental set-up for fluorescence measurements (NILPRP).


Stage II

Stage II  Experiments of preparation of the special optical infrared elements and quantum dots. Duration of stage II: 6 months.

A II.1 Preparation of thin chalcogenide films on silicon substrates to be used for quantum dots preparation (NIMP). Results: samples of thin films. 

A II.2 Investigation of the structural, electrical, optical properties of the chalcogenide films (NIMP, NILPRP). Results: research report, paper.

A II.3 Obtaining of optical infrared elements and combinations thereof to form complex part of an optoelectronic circuit (NIMP). Results: samples.

A II.4 Creation of quantum dots on an oriented surface and characterization of their properties and self-organization (NIMP). Results: research report.

A II.5 Luminescence properties of a quantum dot functionalised surface (NILPRP).

Stage III

Stage III  Production of materials based on arsenic chalcogenides doped with rare-earth elements having luminescent properties. Duration of stage III: 6 months.

A III.1 Preparation of bulk materials by using metallic dopants (europium) and various concentration ratios of the main components (NIG). Results: samples of bulk chalcogenide materials.

A III.2 Preparation of amorphous thin films with rare-earth dopants (by evaporation and/or sputtering in radiofrequency) (NIMP). Results: research report, samples.

A III.3 Measuring of the optical properties for the possible inclusion in optoelectronic devices (NIMP,  NILPRP). Results: research report.


Stage IV

Stage IV  Applications of the quantum dots surfaces. Duration of stage IV: 6 months.

A IV.1  Measurements of the quantum dots deposited on surfaces (NIMP, NILPRP).  Results: research report, paper.

A IV.2 Documents for patenting. Sending to OSIM (NIMP,  NILPRP). Results: patent.


Stage V

Stage V  Production of fiber and prism-fiber connection. Duration of stage V: 6 months.

A V.1 Optical measurements on the prism, fiber and combination thereof (NIMP, NILPRP, NIG).  Results: device, sheet of product.

A V.2 Documents for patenting. Sending to OSIM (NIMP, NILPRP, NIG). Results: patent.


Stage VI

Stage VI  Luminescent quantum dots. Duration of stage VI: 9 months.

A VI.1 Production of quantum dots on substrates, based on europium doped chalcogenides (NIMP). Results: research report.

A VI.2 Luminescence measurements (NILPRP). Results: research report, paper.